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Semiconductor device fabrication
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#	Item
361	February 9, 2006 Annex F Questionnaire (one per chemical) Chemical name (as used by the POPs Review Committee (POPRC)) Perfluorooctane sulfonate (PFOS). Note: in the answers below, the term “PFOS” should also be u Add to Reading List Source URL: www.pops.int Language: English - Date: 2008-05-02 10:38:08 Sulfonic acids Actuarial science Perfluorooctanesulfonic acid Photolithography Semiconductor device fabrication Applied Materials Fluorine Photoresist Semiconductor Equipment and Materials International Chemistry Persistent organic pollutants Perfluorinated compounds
362	OXFORD APPLIED RESEARCH Low Energy Ion Source- LIon50 Specimen cleaning, Ion spectroscopy. 30eV - 1keV Add to Reading List Source URL: www.oaresearch.co.uk Language: English - Date: 2015-04-23 17:42:59 Ions Thin film deposition Mass spectrometry Ion source Semiconductor device fabrication Ion beam Electron Ion gun Static secondary-ion mass spectrometry Chemistry Physics Scientific method
363	Day 5 will take place at Department of Solid State Sciences. (www.solid.ugent.be/en/contact) Registration and financial support The number of participants is limited to 50 with a priority for PhD students. Pre-registrati Add to Reading List Source URL: www.defects.ugent.be Language: English - Date: 2014-02-28 08:40:44 Crystallographic defects Deep-level transient spectroscopy Spectroscopy Electron beam induced current Solar cell Dislocation Semiconductor Gallium nitride IMEC Chemistry Materials science Semiconductor device fabrication
364	Pulsed Laser Deposition A versatile method for synthesizing nanoscale heterostructures and nanoparticles Neocera offers standard and custom PLD systems and components for nano-materials Add to Reading List Source URL: www.neocera.com Language: English - Date: 2013-01-04 14:36:46 Manufacturing Ultraviolet radiation Laser machining Pulsed laser deposition Semiconductor device fabrication Nanoparticle Thin film Nanostructure Technology Nanomaterials Materials science Thin film deposition
365	INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. MatterS293–S299 Add to Reading List Source URL: www.geocities.jp Language: English - Date: 2003-12-22 11:11:53 Quantum electrodynamics Spectroscopy Semiconductor device fabrication Spintronics Ion implantation Zinc oxide Annealing Positron Electron Chemistry Physics Leptons
366	Surface and Interface 2002S2-002 Photoemission study on interfacial reaction of Ti/n-GaN Takayuki Naono, Jun Okabayashi, Satoshi Toyoda, Hiroshi Fujioka, Masaharu Oshima, and Hiroshi Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:30:35 Nitrides Materials science Condensed matter physics Ohmic contact Atomic physics Photoemission spectroscopy Work function Core electron Titanium nitride Chemistry Physics Semiconductor device fabrication
367	Rapid Thermal Processing System Features: Desk-Top design Add to Reading List Source URL: www.collimage.com.tw Language: English - Date: 2013-09-09 05:45:33 Annealing Susceptor Materials science Manufacturing Thin film deposition Semiconductor device fabrication Technology Rapid thermal processing
368	2 Materials Science PF Activity Report 2012 #30 X-Ray Photo-Induced Phase Transition Enabled by Impurity Doping in Layered Manganite Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2013-12-17 01:43:54 Materials science Phase transitions Quantum phases Doping Semiconductor device fabrication Ferromagnetism Crystal structure Physics Chemistry Condensed matter physics
369	PHYSICAL REVIEW B 71, 115213 共2005兲 Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam Z. Q. Chen,* A. Kawasuso, Y. Xu, and H. Naramoto Advanced Science Research Center, Japan Atomic Energy Add to Reading List Source URL: www.geocities.jp Language: English - Date: 2005-04-08 22:17:59 Spintronics Materials science Semiconductor device fabrication Zinc oxide Positronium Electron Annealing Raman scattering Ion implantation Physics Chemistry Quantum electrodynamics
370	Photon Factory Activity Report 2007 #25 Part BSurface and Interface 2C/2005S2-002 Hf-silicidation reactions due to vacuum annealing for a-Si/ HfSiO(N)/ Si gate Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:34:50 Nitrides Superhard materials Materials science Thin film deposition High-k dielectric Transistors Silicide Titanium nitride Atomic layer deposition Chemistry Semiconductor device fabrication Matter

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